High-performance thin-film transistor with 6,13-bis(triisopropylsilylethynyl) pentacene by inkjet printing

被引：117

作者：

Lee, Sun Hee ^{[1
]}

Choi, Min Hee ^{[1
]}

Han, Seung Hoon ^{[1
]}

Choo, Dong Joon ^{[1
]}

Jang, Jin ^{[1
]}

Kwon, Soon Ki ^{[2
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea

[2] Gyeong Sang Univ, Sch Nano & Adv Mat, Inst Engn Res, Jinju 660701, South Korea

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期

关键词：

OTFT ink-jet printing; TIPS pentacene; substrate temperature; organic electronics; flexible display;

D O I：

10.1016/j.orgel.2008.05.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the performance improvement of organic thin-film transistor (OTFT) with a solution based TIPS pentacene (6,13-bis(triisopropylsilyiethynyl)pentacene) by inkjet printing. The TIPS pentacene with 1.0 wt.% solution in 1,2-dichlorobenzene was used for printing of an active layer of OTFT. The OTFT printed at room temperature shows a shoulder-like behavior but it disappears for the OTFT printed at the substrate temperature of 60 degrees C. The OTFT on plastic exhibited an on/off current ratio of similar to 10(7), a threshold voltage of -2.0 V, a gate voltage swing of 0.6 V/decade and a field-effect mobility of 0.24 cm(2)/VS in the saturation region. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：721 / 726

页数：6

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