Development of Ultra-Thin GaAs Photocathodes

被引：1

作者：

Dowdy, Ryan ^{[1
]}

Attenkofer, Klaus ^{[2
]}

Frisch, Henry ^{[2
,3
]}

Lee, Seon Woo ^{[3
]}

Li, Xiuling ^{[1
]}

Ross, Steve R. ^{[3
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, 208 N Wright St, Urbana, IL 61801 USA

[2] Univ Chicago, Enrico Fermi Inst, Chicago, IL 60637 USA

[3] Argonne Natl Lab, Argonne, IL 60439 USA

来源：

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON TECHNOLOGY AND INSTRUMENTATION IN PARTICLE PHYSICS (TIPP 2011) | 2012年 / 37卷

关键词：

Photocathode; NEA; low emmittance; high quantum efficiency; device design; visible light photodetector; non-thermalized; electron momentum; GaAs L-valley; blue photocathode; WORK FUNCTION; SURFACE; HYDROGEN;

D O I：

10.1016/j.phpro.2012.02.439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultra thin and highly efficient photocathode structure is designed and optimized for the 400nm optical wavelength regime. The cathode thickness is comparable to the mean free path of the photoelectron allowing design concepts which are built on non-thermalized photoelectrons. Designs for ultra-low emittance and high quantum efficiency are proposed and first test structures are grown and characterized. Additionally, a discussion on the specifics of the transfer and bonding process of ultra-thin cathodes is presented. (C) 2011 Published by Elsevier BV. Selection and/or peer-review under responsibility of the organizing committee

引用

页码：976 / 984

页数：9

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