Large Area Plan-View Transmission Electron Microscopy Sample Preparation for Multijunction Metamorphic Solar Cell Devices

被引：0

作者：

Jackson, M. J. ^{[1
]}

Jackson, B. L. ^{[1
]}

Bodzin, N. ^{[1
]}

Zakaira, A. ^{[2
]}

Liu, X-Q. ^{[2
]}

King, R. R. ^{[2
]}

Goorsky, M. S. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Spectrolab Inc, Sylmar, CA 91342 USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

Defect characterization; TEM; plan view; metamorphic devices; BUFFER LAYERS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An initial cross section FIB cut allows plan-view sample creation from any layer of interest, and therefore rapid characterization of the defect density as a function of depth is achievable for structures containing multiple layers, such as multi-junction metamorphic layer structures for high efficiency III-V solar cells. Uniform electron transparent plan-view areas of greater than 100 mu m(2) are extracted from a cross-section to facilitate observation of defect densities as low as similar to 10(6) cm(-2). To demonstrate the technique, the active cell layers of two inverted metamorphic III-V solar cell structures have been imaged to reveal defect densities as high as 109 cm-2 and as low as 10(6) cm(-2).

引用

页码：1620 / 1623

页数：4