Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILC

被引：21

作者：

Chen, Yi-Hsuan ^{[1
]}

Yen, Li-Chen ^{[1
]}

Chang, Tien-Shun ^{[1
]}

Chiang, Tsung-Yu ^{[1
]}

Kuo, Po-Yi ^{[1
]}

Chao, Tien-Sheng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期

关键词：

Metal-induced lateral crystallization (MILC); poly-Si thin-film transistor (poly-Si TFTs); tunneling field-effect-transistor (TFET); OPTIMIZATION;

D O I：

10.1109/LED.2013.2266331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, similar to 232 mV/decade, than the other T-TFTs and a high ON/OFF ratio > 10(6) at V-DS = 1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.

引用

页码：1017 / 1019

页数：3

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