Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress

被引：3
作者：
Hsieh, Tien-Yu [1 ]
Chang, Ting-Chang [1 ]
Chen, Te-Chih [1 ]
Tsai, Ming-Yen [2 ]
Chen, Yu-Te [2 ]
Jian, Fu-Yen [3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelectron Technol Ctr, Kaohsiung, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30078, Taiwan
来源：
WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13 | 2012年 / 45卷 / 07期
关键词：
D O I：
10.1149/1.3701533
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This paper investigates the degradation mechanism of amorphous InGaZnO thin-film transistors under DC and AC gate bias stress. Comparing the degradation behavior at equal accumulated effective stress time, more pronounced threshold voltage shift under AC positive gate bias stress in comparison with DC stress indicates extra electron-trapping phenomenon occurs in the duration of rising/falling time in pulse. Contrarily, illuminated AC negative gate bias stress exhibits much less threshold voltage shift than DC stress, which suggesting the photo-generated hole does not has sufficient time to drift to the interface of IGZO/gate insulator and causes hole-trapping under AC operation. Since the evolution of threshold voltage fits the stretched-exponential equation well, the different degradation tendencies under DC/AC stress can be attributed to the different electron-and hole-trapping efficiencies, and this is further verified by varying pulse waveform.
引用
收藏
页码：133 / 140
页数：8
相关论文
共 50 条
[21]   The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors [J].
Huang, Sheng-Yao ;
Chang, Ting-Chang ;
Lin, Li-Wei ;
Yang, Man-Chun ;
Chen, Min-Chen ;
Jhu, Jhe-Ciou ;
Jian, Fu-Yen .
APPLIED PHYSICS LETTERS, 2012, 100 (22)
[22]   Two-step degradation of a-InGaZnO thin film transistors under DC bias stress [J].
Hu, Chun-Feng ;
Teng, Tong ;
Qu, Xin-Ping .
SOLID-STATE ELECTRONICS, 2019, 152 :4-10
[23]   Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses [J].
Lee, Daeun ;
Jeong, Chan-Yong ;
Song, Sang-Hun ;
Jin Xiao-Shi ;
Kim, Jong In ;
Lee, Jong-Ho ;
Kwon, Hyuck-In .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (01)
[24]   Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases [J].
Song, Tianyuan ;
Zhang, Dongli ;
Wang, Mingxiang ;
Shan, Qi .
CHINESE PHYSICS B, 2022, 31 (08)
[25]   Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases [J].
宋天源 ;
张冬利 ;
王明湘 ;
单奇 .
Chinese Physics B, 2022, 31 (08) :690-694
[26]   Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress [J].
Zhang, Bing ;
Zhang, Dongli ;
Wang, Mingxiang ;
Wang, Huaisheng ;
Wang, Rongxin .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) :588-594
[27]   Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors [J].
Lee, Sang Won ;
Suh, Dongseok ;
Lee, Si Young ;
Lee, Young Hee .
APPLIED PHYSICS LETTERS, 2014, 104 (16)
[28]   Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors [J].
Raja, Jayapal ;
Jang, Kyungsoo ;
Balaji, Nagarajan ;
Choi, Woojin ;
Thanh Thuy Trinh ;
Yi, Junsin .
APPLIED PHYSICS LETTERS, 2013, 102 (08)
[29]   Effect of temperature and illumination on the instability of a-Si:H thin-film transistors under AC gate bias stress [J].
Huang, CY ;
Teng, TH ;
Yang, CJ ;
Tseng, CH ;
Cheng, HC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (4A) :L316-L318
[30]   Degradation of InSnZnO Thin-Film Transistors Under Negative Bias Stress [J].
Jiang, Zhendong ;
Zhang, Meng ;
Deng, Sunbing ;
Wong, Man ;
Kwok, Hoi-Sing .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (12) :6381-6386
12345