Room temperature ferromagnetic properties of ZnFeO thin films prepared by thermal oxidation of ZnFeS thin films

被引:19
作者
Feng, Q. J. [1 ,2 ]
Shen, D. Z. [2 ]
Zhang, J. Y. [2 ]
Li, B. H. [2 ]
Zhang, Z. Z. [2 ]
Lu, Y. M. [2 ]
Fan, X. W. [2 ]
机构
[1] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermal oxidation; MOCVD; ZnFeO thin films; Ferromagnetic properties;
D O I
10.1016/j.matchemphys.2008.07.037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Room temperature ferromagnetism is observed in ZnFeO thin films with different Fe content prepared by thermal oxidation of ZnFeS thin films. ZnFeS thin films were grown on c-plane sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) equipment. The X-ray diffraction (XRD) patterns indicated that a transformation from ZnFeS to ZnFeO has taken place at optimum annealing temperature of 800 degrees C, and the d(0 0 2) values were gradually enlarged with increasing Fe content and it further indicates Fe atoms substituting for Zn atoms in the lattice. The images of field-emission scanning electron microscope (SEM) of ZnFeO thin films show that the grain size increases with increasing Fe content. It was found that the ZnFeO thin films were ferromagnetic above room temperature. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:1106 / 1109
页数:4
相关论文
共 20 条
[1]   Room temperature ferromagnetic and ultraviolet optical properties of Co-doped ZnO nanocluster films [J].
Antony, J ;
Pendyala, S ;
Sharma, A ;
Chen, XB ;
Morrison, J ;
Bergman, L ;
Qiang, Y .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[2]  
Brook R.J., 1976, Treatise on Materials Science & Technology, V9, P331
[3]   Electronic structure and magnetic moments of 3d transition metal-doped ZnO [J].
Chien, CH ;
Chiou, SH ;
Guo, GY ;
Yao, YD .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 282 :275-278
[4]  
DANA AS, 2004, APPL PHYS LETT, V85, P1395
[5]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[6]   Influence of Fe content on the structural and optical properties of ZnFeS thin films [J].
Feng, QJ ;
Shen, DZ ;
Zhang, JY ;
Lu, YM ;
Liu, YC ;
Fan, XW .
MATERIALS CHEMISTRY AND PHYSICS, 2006, 96 (01) :158-162
[7]   Grain growth in Mn-doped ZnO [J].
Han, J ;
Mantas, PQ ;
Senos, AMR .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2000, 20 (16) :2753-2758
[8]   Room-temperature fabricated ZnCoO diluted magnetic semiconductors [J].
Huang, Hsin-Hung ;
Yang, Chih-An ;
Huang, Po-Hsiang ;
Lai, Chih-Huang ;
Chin, T. S. ;
Huang, H. E. ;
Bor, H. Y. ;
Huang, R. T. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
[9]   MICROSTRUCTURE DEVELOPMENT IN SB2O3-DOPED ZNO [J].
KIM, J ;
KIMURA, T ;
YAMAGUCHI, T .
JOURNAL OF MATERIALS SCIENCE, 1989, 24 (07) :2581-2586
[10]   Activation of high-Tc ferromagnetism in Mn2+-doped ZnO using amines [J].
Kittilstved, KR ;
Gamelin, DR .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (15) :5292-5293