High-color-temperature p-i-n white organic light-emitting devices based on the fluorescent RGB system

被引：0
|
作者：
Chen, Chao-Jung [1 ,2 ]
Hwang, Shiao-Wen [3 ]
Chen, Chin H. [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Display Inst, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan
来源：
2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | 2007年 / 38卷
关键词：
D O I：
10.1889/1.2785434
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
P-i-n devices with 5% Cs doped Men as the n-type transporting layer and WO3 doped NPB as the p-type transporting layer are investigated for controlling the recombination zone (RZ) of carriers in WOLED based on three adjacent fluorescent red, green and blue emitters. Variation in while CIEx,y color-coordinates are closely related to the proportion of deep blue emission which serves as an indicator for the position of the RZ. By optimizing the concentration of the deep blue dopant, it is possible to enhance the color temperature of WOLED and boost the efficiency to 8 cd/A at 5.5 V (20 mA/cm2) with CIEx,y of (0.33, 0.34) which is among the best reported for the fluorescent RGB 3-emission WOLEDs.
引用
收藏
页码：823 / +
页数：2
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