Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mm-wave applications

被引：0
|
作者：
Yan, Dongyang [1 ,2 ]
Ingels, Mark [1 ]
Mangraviti, Giovanni [1 ]
Liu, Yao [1 ]
Parvais, Bertrand [1 ,2 ]
Waldron, Niamh [1 ]
Collaert, Nadine [1 ]
Wambacq, Piet [1 ,2 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Vrije Univ Brussel VUB, Dept Elect & Informat ETRO, B-1050 Brussels, Belgium
来源：
2019 17TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2019年
关键词：
5G; 28GHz; GaAs; FD-SOI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm -wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAs PA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.
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页数：4
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