Disorder and superconductivity in Mo/Si multilayers

Tc vs R(rectangle) dependence in thin Mo films and Mo/Si multilayers is simultaneously of three-dimensional (3D) and 2D nature: the main effect of disorder consists in essential increase of ''bulk'' T-c0 which appears to exceed many times T-c0 for pure Mo. The x-ray data enable one to explain the origin of T-c0 enhancement in relatively thick layers. The depression of T-c with increasing sheet resistance was observed on Mo/Si multilayers in agreement with the theory of superconductivity in disordered 2D metals. It is found that T-c(R(rectangle)) dependence for multilayers is quite close to one for single Mo films.