Role of implantation-induced defects on the response time of semiconductor saturable absorbers

被引：22
|
作者：
Tan, HH [1 ]
Jagadish, C
Lederer, MJ
Luther-Davies, B
Zou, J
Cockayne, DJH
Haiml, M
Siegner, U
Keller, U
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia
[3] Univ Sydney, Australian Key Ctr Electron Microscopy & Microana, Sydney, NSW 2002, Australia
[4] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期
关键词：
D O I：
10.1063/1.124718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arsenic ion implantation with thermal annealing was used to shorten the response times of GaAs-based saturable absorber structures. Ultrafast absorption bleaching measurements indicated that the recovery time was decreased with increasing the implantation dose. However, above a certain dose the recovery time increased again. This behavior was correlated with the microstructure of the residual implantation defects. (C) 1999 American Institute of Physics. [S0003-6951(99)04936-0].
引用
收藏
页码：1437 / 1439
页数：3
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