Role of implantation-induced defects on the response time of semiconductor saturable absorbers

被引：22

作者：

Tan, HH ^{[1
]}

Jagadish, C

Lederer, MJ

Luther-Davies, B

Zou, J

Cockayne, DJH

Haiml, M

Siegner, U

Keller, U

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia

[3] Univ Sydney, Australian Key Ctr Electron Microscopy & Microana, Sydney, NSW 2002, Australia

[4] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic ion implantation with thermal annealing was used to shorten the response times of GaAs-based saturable absorber structures. Ultrafast absorption bleaching measurements indicated that the recovery time was decreased with increasing the implantation dose. However, above a certain dose the recovery time increased again. This behavior was correlated with the microstructure of the residual implantation defects. (C) 1999 American Institute of Physics. [S0003-6951(99)04936-0].

引用

页码：1437 / 1439

页数：3

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