Role of implantation-induced defects on the response time of semiconductor saturable absorbers

被引：22
|
作者：
Tan, HH [1 ]
Jagadish, C
Lederer, MJ
Luther-Davies, B
Zou, J
Cockayne, DJH
Haiml, M
Siegner, U
Keller, U
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia
[3] Univ Sydney, Australian Key Ctr Electron Microscopy & Microana, Sydney, NSW 2002, Australia
[4] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期
关键词：
D O I：
10.1063/1.124718
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arsenic ion implantation with thermal annealing was used to shorten the response times of GaAs-based saturable absorber structures. Ultrafast absorption bleaching measurements indicated that the recovery time was decreased with increasing the implantation dose. However, above a certain dose the recovery time increased again. This behavior was correlated with the microstructure of the residual implantation defects. (C) 1999 American Institute of Physics. [S0003-6951(99)04936-0].
引用
收藏
页码：1437 / 1439
页数：3
相关论文
共 50 条
  • [1] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
    BUBULAC, LO
    TENNANT, WE
    RIEDEL, RA
    MAGEE, TJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 251 - 254
  • [2] Implantation-induced defects in silicon carbide
    Pensl, G
    Frank, T
    Krieger, M
    Laube, M
    Reshanov, S
    Schmid, F
    Weidner, M
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 121 - 127
  • [3] Intrinsic and implantation-induced defects in CVD diamond
    Yagyu, H
    Mori, Y
    Hatta, A
    Ito, T
    Deguchi, M
    Kitabatake, M
    Hirao, T
    Hiraki, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1996, 154 (01): : 305 - 320
  • [4] Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
    Szeles, Cs.
    Nielsen, B.
    Asoka-Kumar, P.
    Lynn, K.G.
    Anderle, M.
    Ma, T.P.
    Rubloff, G.W.
    Materials Science Forum, 1995, 175-178 (pt 1): : 545 - 548
  • [5] ROLE OF IMPLANTATION-INDUCED DEFECTS IN SURFACE-ORIENTED DIFFUSION OF FLUORINE IN SILICON
    SZELES, C
    NIELSEN, B
    ASOKAKUMAR, P
    LYNN, KG
    ANDERLE, M
    MA, TP
    RUBLOFF, GW
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3403 - 3409
  • [6] Ion implantation-induced defects and the influence of titanium silicidation
    Chi, DZ
    Ashok, S
    Theodore, D
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II, 1998, 510 : 275 - 280
  • [7] Semiconductor saturable absorbers with recovery time controlled by lattice mismatch
    Guina, Mircea D.
    Suomalainen, Soile
    Hakulinen, Tommi
    Okhotnikov, Oleg G.
    Marcinkevicius, Saulius
    OPTICAL COMPONENTS AND MATERIALS IV, 2007, 6469
  • [8] Implantation-induced Defects Analysis Base on Activation Energy Diagnostics
    Pengchan, Weera
    Phetchakul, Toempong
    Poyai, Amporn
    PROCEEDINGS OF THE 2009 12TH INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC 2009), 2009, : 607 - +
  • [9] The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing
    Koegler, R.
    Ou, X.
    Skorupa, W.
    Moeller, W.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
  • [10] Semiconductor saturable absorbers with recovery time controlled through growth conditions
    Guina, Mircea D.
    Tuomisto, Pietari
    Okhotnikova, Oleg G.
    Marcinkevicius, Saulius
    Mizohata, Kenichiro
    Keinonen, Juhani
    SOLID STATE LASERS XVI: TECHNOLOGY AND DEVICES, 2007, 6451
12345