Design and tolerancing of ArF excimer laser optics for lithography

被引:0
|
作者
Chung, HB
Lee, KH
Kim, DH
Yoo, HJ
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An ArF excimer laser exposure tool is expected as a work horse in the sub-quarter-micron lithography era. We have been trying to develop such an exposure tool. As a part of this development project, we have designed an optical system that uses an ArF excimer laser as an illuminating light source. The optical system is a catadioptric system and uses a polarizing beam splitter and a quarter-wave plate to eliminate the central obscuration of the system, its specifications are a numerical aperture of 0.5, a reduction ratio of 1/4, and a field size of phi 24 mm (or 22x5 mm(2) slit). The modulation transfer function values at 2500 cycles/mm are more than 40%. We have also analyzed the permissible tolerances of the system parameters. The resultant permissible tolerances are lambda/10 for the mirror surface, lambda/4 for the lens surface, +/-5 mu m for the lens thickness and the spacing between lenses, 0.5 minutes of are for eccentricity, 300 pm for the laser bandwidth, and +/-0.1 degrees C for the temperature.
引用
收藏
页码:534 / 539
页数:6
相关论文
共 50 条
  • [41] Photo-chemical polishing of fused silica optics by using ArF excimer laser
    Murahara, M
    LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2000, PROCEEDINGS, 2001, 4347 : 547 - 552
  • [42] New generation projection optics for ArF lithography
    Chiba, Y
    Takahashi, K
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 679 - 686
  • [43] Investigations regarding the prevention of depolarization of ArF excimer laser irradiation by CaF2 laser optics
    Natura, Ute
    Keutel, Dietmar
    Letz, Martin
    Parthier, Lutz
    Knapp, Konrad
    OPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520
  • [44] Design of illumination system for ArF excimer laser step-and-scanner
    Lee, KH
    Kim, DH
    Kim, JS
    Choi, SS
    Chung, HB
    Yoo, HJ
    Kim, BW
    OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 997 - 1004
  • [45] Development on excimer laser lithography
    Tian, Wenyan
    Zeng, Chuanxiang
    Pan, Daren
    Zhou, Yewei
    Jiguang Zazhi/Laser Journal, 1992, 13 (03): : 113 - 116
  • [46] EXCIMER LASER PROJECTION LITHOGRAPHY
    JAIN, K
    KERTH, RT
    APPLIED OPTICS, 1984, 23 (05): : 648 - 650
  • [47] Development of pellicle for ArF excimer laser
    Shigematsu, S
    Kondo, M
    Nakagawa, H
    PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 : 166 - 176
  • [48] SPECTRAL TUNING OF AN ARF EXCIMER LASER
    YE, C
    YUAN, CL
    SHANGGUAN, C
    DOU, AR
    CHINESE PHYSICS, 1982, 2 (01): : 230 - 231
  • [49] Development of pellicle for ArF excimer laser
    Shigematsu, S
    Eda, A
    Nakagawa, H
    PHOTOMASK AND X-RAY MASK TECHNOLOGY V, 1998, 3412 : 405 - 419
  • [50] Pellicle for ArF excimer laser photolithography
    Sakurai, I
    Shirasaki, T
    Kashida, M
    Kubota, Y
    PHOTOMASK AND X-RAY MASK TECHNOLOGY VI, 1999, 3748 : 177 - 187