共 50 条
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- [22] Line-narrowed ArF excimer laser for 193 nm lithography OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 : 1069 - 1075
- [23] Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 43 - 52
- [24] Synthesis of silicon-containing photoresists for ArF excimer laser lithography JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 6869 - 6872
- [26] ARF EXCIMER LASER PROJECTION LITHOGRAPHY USING PARTIALLY ACHROMATIZED LENS SYSTEM JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (11): : 2553 - 2558
- [27] Development of ZrSiO attenuated phase shift mask for ArF excimer laser lithography 19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 : 979 - 986
- [29] Negative-type chemically amplified resists for ArF excimer laser lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 503 - 511
- [30] Study of dry etching resistance of methacrylate polymers for ArF excimer laser lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 595 - 600