Photoinduced hole injection in semiconductor-coordination compound systems

被引：47

作者：

Buchalska, Marta ^{[1
]}

Kuncewicz, Joanna ^{[1
]}

Swietek, Elzbieta ^{[1
]}

Labuz, Przemyslaw ^{[1
]}

Baran, Tomasz ^{[1
]}

Stochel, Grazyna ^{[1
]}

Macyk, Wojciech ^{[1
]}

机构：

[1] Uniwersytet Jagiellonski, Wydzial Chem, PL-30060 Krakow, Poland

来源：

COORDINATION CHEMISTRY REVIEWS | 2013年 / 257卷 / 3-4期

关键词：

Photosensitization; Hole injection; Dye-sensitized solar cells; Photocatalysis; SENSITIZED SOLAR-CELLS; INTERFACIAL ELECTRON-TRANSFER; VISIBLE-LIGHT PHOTOCATALYSIS; P-TYPE SEMICONDUCTORS; TITANIUM-DIOXIDE; SURFACE COMPLEXATION; TRANSFER DYNAMICS; TIO2; PHOTOCURRENT; NIO;

D O I：

10.1016/j.ccr.2012.09.017

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A photoinduced electron injection from the excited photosensitizer to the conduction band is usually a key step of photosensitization of wide bandgap semiconductors. The significance of this process has been recognized especially in the case of titanium dioxide, when applied as a visible light active photocatalyst or as an anode material in dye-sensitized solar cells. An alternative mechanism of the semiconductor sensitization may involve a photoinduced hole injection into the valence band. This paper reviews semiconductor systems (NiO, copper compounds, doped diamond, TiO2) photosensitized by coordination compounds capable of a photoinduced hole injection into the valence band. The applicability of such systems for photocatalysis and photovoltaics is presented. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：767 / 775

页数：9

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