Parameters of the Constant-Energy Surface and Features of Charge Carrier Scattering of Bi2Te3-Based Epitaxial Films

被引:4
作者
Lukyanova, L. N. [1 ]
Boikov, Yu. A. [1 ]
Danilov, V. A. [1 ]
Volkov, M. P. [1 ]
Kutasov, V. A. [1 ]
机构
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
Thermoelectricity; bismuth-telluride-based films; transport properties; anisotropic scattering mechanism; FIGURE-OF-MERIT; SOLID-SOLUTIONS; THERMOELECTRIC PROPERTIES; BISMUTH;
D O I
10.1007/s11664-012-2432-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Galvanomagnetic properties of epitaxial Bi0.5Sb1.5Te3 films grown by the hot-wall technique were investigated in magnetic fields of H = 5 T to 14 T through the temperature interval of 10 K to 300 K. The results were analyzed in terms of a many-valley model of the energy spectrum and anisotropic charge carrier scattering. The degeneracy parameter beta (d), and ratios of components of the reciprocal effective-mass tensor and relaxation time tensor were estimated. Substantial anisotropy of charge carrier scattering was observed in the investigated temperature interval. Anisotropy of charge carrier scattering along bisector axes is enhanced, as compared with that of corresponding bulk samples. High charge carrier mobility and higher angular factor of the temperature dependence of mobility promote enhancement of the figure of merit Z of the films as compared with that of corresponding bulk solid solutions.
引用
收藏
页码:1796 / 1800
页数:5
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