Thermodynamic Study on the Synthesis of SiC with Silicon Cutting Waste

被引：1

作者：

Jiang, Shengnan ^{[1
]}

Xing, Pengfei ^{[1
]}

Gao, Shuaibo ^{[1
]}

Jin, Xing ^{[1
]}

Zhuang, Yanxin ^{[1
,2
]}

机构：

[1] Northeastern Univ, Sch Met, Shenyang 110819, Peoples R China

[2] Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Peoples R China

来源：

SILICON | 2021年 / 13卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Thermodynamics; Balanced calculation; SCW; SiC; KERF-LOSS SLURRY; HIGH-PURITY SILICON; GROWTH-MECHANISM; SEPARATION; RECOVERY; CARBIDE; PURIFICATION; POWDER; SLAG;

D O I：

10.1007/s12633-020-00700-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, a simple, efficient and commercial available approach for recycle and reutilization of silicon cutting waste(SCW) to prepare high purity SiC is proposed, and the thermodynamic characterization of the SiC preparation and its growth mechanism are investigated. The effects of thermodynamic temperature, Si/C ratio and system pressure on the influence of recovering SCW are studied in detail with HSC 6.0 software. SiC balanced amount was about 1.7 mol/100 g and its content reached 66%, when the temperature reached 1880 degrees C. A decrease of Si/C ratio in the range of 1/1-1/4 will contribute to a decrease of smelting temperature, and the ordinary pressure of 1 bar is considered as the optimum pressure for the synthesis of SiC.

引用

页码：3953 / 3961

页数：9

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