P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction

被引：9
|
作者：
Il'inskaya, N. D. [1 ]
Karandashev, S. A. [1 ]
Lavrov, A. A. [1 ,2 ]
Matveev, B. A. [1 ]
Remennyi, M. A. [1 ]
Stus, N. M. [1 ]
Usikova, A. A. [1 ]
机构：
[1] Ioffe Inst, 26 Politekh Skaya, St Petersburg 194021, Russia
[2] IoffeLED Ltd, 26 Politekh Skaya, St Petersburg 194021, Russia
来源：
INFRARED PHYSICS & TECHNOLOGY | 2018年 / 88卷
关键词：
MU-M; HETEROSTRUCTURE; PHOTODETECTOR; DETECTOR; RANGE; ARRAY;
D O I：
10.1016/j.infrared.2017.11.003
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
[No abstract available]
引用
收藏
页码：223 / 227
页数：5
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