Controlling Solid-Gas Reactions at Nanoscale for Enhanced Thin Film Morphologies and Device Performances in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells

被引:15
作者
Jiang, Chengyang [1 ,2 ]
Hsieh, Yao-Tsung [1 ,2 ]
Zhao, Hongxiang [1 ,2 ]
Zhou, Huanping [1 ,2 ]
Yang, Yang [1 ,2 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
基金
美国国家科学基金会;
关键词
THERMAL-DECOMPOSITION; FORMATION MECHANISM; EFFICIENCY; THIOUREA; FABRICATION; CZTSSE; LIGHT; CONDENSATION; NANOCRYSTALS; SELENIZATION;
D O I
10.1021/jacs.5b05819
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Using Cu2ZnSn(S,Se)(4) (CZTSSe) as a model system, we demonstrate the kinetic control of solid-gas reactions at nanoscale by manipulating the surface chemistry of both sol-gel nanoparticles (NPs) and colloidal nanocrystals (NCs). Specifically, we first identify that thiourea (commonly used as sulfur source in sol-gel processes for metal sulfides) can transform into melamine upon film formation, which serves as surface ligands for as-formed Cu2ZnSnS4 (CZTS) NPs. We further reveal that the presence of these surface ligands can significantly affect the outcome of the solid-gas reactions, which enables us to effectively control the selenization process during the fabrication of CZTSSe solar cells and achieve optimal film morphologies (continuous large grains) by fine-tuning the amount of surface ligands used. Such enhancement leads to better light absorption and allows us to achieve 6.5% efficiency from CZTSSe solar cells processed via a sol-gel process using nontoxic, low boiling point mixed solvents. We believe our discovery that the ligand of particulate precursors can significantly affect solid-gas reactions is universal to solid-state chemistry and will boost further research in both understanding the fundamentals of solid-state reactions at nanoscale and taking advantage of these reactions to fabricate crystalline thin film semiconductors with better morphologies and performances.
引用
收藏
页码:11069 / 11075
页数:7
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