Optical activity of Yb in GaAs and low-dimensional GaAs GaAlAs structures

被引：0

作者：

Gippius, AA ^{[1
]}

Konnov, VM ^{[1
]}

Dravin, VA ^{[1
]}

Loiko, NN ^{[1
]}

Kazakov, IP ^{[1
]}

Ushakov, VV ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1187743

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the optical activation of Yb in GaAs and low-dimensional GaAs/GaAlAs structures can be achieved by forming three-component (Yb+S/Se/Te+O) luminescence centers based on the Yb3+ ion. A correlation between the characteristics of these centers and the parameters of the chalcogen coactivators is discovered. Oxygen is shown to play a decisive role in transferring the energy of electron-hole pairs to the luminescence centers. (C) 1999 American Institute of Physics. [S1063-7826(99)01106-0].

引用

页码：627 / 629

页数：3

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