Optical activity of Yb in GaAs and low-dimensional GaAs GaAlAs structures

被引：0
|
作者：
Gippius, AA [1 ]
Konnov, VM [1 ]
Dravin, VA [1 ]
Loiko, NN [1 ]
Kazakov, IP [1 ]
Ushakov, VV [1 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia
来源：
SEMICONDUCTORS | 1999年 / 33卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1187743
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown that the optical activation of Yb in GaAs and low-dimensional GaAs/GaAlAs structures can be achieved by forming three-component (Yb+S/Se/Te+O) luminescence centers based on the Yb3+ ion. A correlation between the characteristics of these centers and the parameters of the chalcogen coactivators is discovered. Oxygen is shown to play a decisive role in transferring the energy of electron-hole pairs to the luminescence centers. (C) 1999 American Institute of Physics. [S1063-7826(99)01106-0].
引用
收藏
页码：627 / 629
页数：3
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