Double-pulsed PECVD synthesis of hydrogenated nanocrystalline silicon thin films

被引：0

作者：

Fields, J. D. ^{[1
]}

Gallon, J. B. ^{[2
]}

Hu, J. ^{[2
]}

Valentich, Ed ^{[2
]}

Taylor, P. C. ^{[1
]}

Madan, A. ^{[2
]}

机构：

[1] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

[2] MVSyst Inc, Golden, CO USA

来源：

THIN FILM SOLAR TECHNOLOGY IV | 2012年 / 8470卷

基金：

美国国家科学基金会;

关键词：

Silicon; thin film; microstructural evolution; pulsed PECVD; mobility; CHEMICAL-VAPOR-DEPOSITION; POLYCRYSTALLINE SILICON; LOW-TEMPERATURE; MICROCRYSTALLINE SILICON; SOLAR-CELLS; GAS-MIXTURE; TRANSISTORS; PLASMA; LASER; GROWTH;

D O I：

10.1117/12.930236

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Our efforts focus on developing a method to produce hydrogenated nanocrystalline silicon (nc-Si:H) with larger crystallites to enhance carrier transport properties. A new PECVD methodology, called double pulsed PECVD (DP-PECVD), employs alternating low frequency and high frequency discharge sub-cycles to sequentially grow and etch the evolving film, respectively. This confers enhanced process control compared to conventional methods, and provides a pathway to achieve our goal of enhanced carrier mobility. Preliminary results demonstrate nc-Si: H films possessing grains as large as 29 nm, with (220) preferred orientation, which is suitable for solar cell applications. Reactions between plasma species in a SiF4:H-2:SiH4 glow discharge, which expectedly contribute to evolution of large grains, are also discussed. Our findings suggest the double pulse strategy is a valuable method for manipulating the microstructural evolution of PECVD grown thin film materials.

引用

页数：8

共 32 条

[1] Laser processing of amorphous silicon for large-area polysilicon imagers [J].