A new structure of low-noise CMOS differential amplifier

被引：0

作者：

Wei, L ^{[1
]}

Gao, J ^{[1
]}

Chen, ZJ ^{[1
]}

Ji, LJ ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2 | 2005年

关键词：

CMOS; differential amplifier; low noise; l/f noise;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A new structure of low-noise CMOS differential amplifier has been presented in this paper. The structure is mainly based on a load of common-gate MOSFETs with resistances in series at sources (CG-R load), which does not increase complication of the circuit. This structure decreases 1/f noise of the load by a (1 + g(m2) R)(2) coefficient, while keeps the voltage gain high. The simulation result for the given example reveals an average reduction of 90% for load noise at low frequencies, compared with current-mirror load (CM load).

引用

页码：410 / 413

页数：4

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