Metal-Oxide RRAM

被引：2242
|
作者：
Wong, H. -S. Philip [1 ]
Lee, Heng-Yuan [2 ]
Yu, Shimeng [1 ]
Chen, Yu-Sheng [2 ,3 ]
Wu, Yi [1 ]
Chen, Pang-Shiu [2 ,4 ]
Lee, Byoungil [1 ]
Chen, Frederick T. [2 ]
Tsai, Ming-Jinn [2 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] ITRI, Elect & Optoelect Res Labs, Nanoelect Technol Div, Hsinchu 31040, Taiwan
[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
[4] Ming Hsin Univ Sci & Technol, Dept Chem & Mat Engn, Hsinchu 30401, Taiwan
来源：
PROCEEDINGS OF THE IEEE | 2012年 / 100卷 / 06期
基金：
美国国家科学基金会;
关键词：
Emerging memory; metal oxide; multibit memory; nonvolatile memory; OxRAM; ReRAM; resistance change memory; resistive switching memory; resistive switching random access memory (RRAM); solid-state memory; RESISTIVE SWITCHING BEHAVIORS; TIO2; THIN-FILMS; THERMAL DISSOLUTION MODEL; ATOMIC-LAYER DEPOSITION; NONVOLATILE MEMORY; HIGH-SPEED; HIGH-DENSITY; NEGATIVE-RESISTANCE; DOPED SRTIO3; LOW-POWER;
D O I：
10.1109/JPROC.2012.2190369
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.
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页码：1951 / 1970
页数：20
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