Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal

被引：11

作者：

Fernandez, L. ^{[1
,6
,7
]}

Makarova, A. A. ^{[1
]}

Laubschat, C. ^{[1
]}

Vyalikh, D. V. ^{[2
,3
]}

Usachov, D. Yu ^{[4
]}

Ortega, J. E. ^{[2
,5
,6
,7
]}

Schiller, F. ^{[2
,6
,7
]}

机构：

[1] Tech Univ Dresden, Inst Festkorper & Mat Phys, D-01062 Dresden, Germany

[2] Donostia Int Phys Ctr, Donostia San Sebastian 20018, Spain

[3] Ikerbasque, Basque Fdn Sci, Bilbao 48013, Spain

[4] St Petersburg State Univ, Phys Dept, 7-9 Univ Skaya Nab, St Petersburg 199034, Russia

[5] Univ Basque Country, UPV EHU, Dept Fis Aplicada 1, San Sebastian 20018, Spain

[6] Univ Basque Country, CSIC, Ctr Fis Mat, San Sebastian 20018, Spain

[7] MPC, San Sebastian 20018, Spain

来源：

2D MATERIALS | 2019年 / 6卷 / 02期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

curved crystal; faceting; hBN monolayer; vicinal Ni(111) surface; ONE-DIMENSIONAL NANOSTRUCTURES; H-BN MONOLAYER; EPITAXIAL-GROWTH; GRAPHENE; LAYER; GRAPHITE; FILMS; CU(111); SPECTRA; NICKEL;

D O I：

10.1088/2053-1583/ab01e7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(1 1 1) terraces alternating with strongly tilted hBN/Ni(1 1 5) or hBN/Ni(1 1 0) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (1 1 1) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (1 1 0)- and (1 1 5)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(1 1 1) terrace.

引用

页数：11

共 80 条

[51] Nano boron nitride flatland [J].