Synthesis and properties of Ag-doped ZnO films with room temperature ferromagnetism

被引:10
作者
Xu, Qin [1 ]
Wang, Zhi-Jun [2 ]
Chang, Ze-Jiang [1 ]
Liu, Jing-Jin [3 ]
Ren, Ya-Xuan [1 ]
Sun, Hui-Yuan [4 ]
机构
[1] Hebei Univ Technol, Dept Appl Phys, Tianjin 300401, Peoples R China
[2] Hebei Chem & Pharmaceut Vocat Technol Coll, Shijiazhuang 050026, Peoples R China
[3] Tianjin Univ, Fac Sci, Tianjin 300072, Peoples R China
[4] Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050024, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO film; Magnetron sputtering; Room temperature ferromagnetism; MAGNETIC SEMICONDUCTORS; THIN-FILMS; SYSTEM;
D O I
10.1016/j.cplett.2016.10.044
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of Ag-doped ZnO films were prepared by DC magnetron sputtering. XRD and SEM results showed that the doping amount of Ag had a great influence on the films' morphology and ferromagnetism, and their magnetism can be improved by doping an appropriate amount of Ag. The theoretical analysis suggested that the magnetism resulted mainly from the film grain boundary surfaces. Further research revealed that these films had strong timeliness. Such a result indicated that the room temperature ferromagnetism of Ag-doped ZnO films did not stem from the cation vacancies but from the oxygen vacancies on the boundary surfaces. (C) 2016 Elsevier B. V. All rights reserved.
引用
收藏
页码:28 / 32
页数:5
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