Trap-assisted tunneling resistance switching effect in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3 heterostructure

被引：29
作者：
Chen, X. G. [1 ]
Fu, J. B. [1 ]
Liu, S. Q. [1 ]
Yang, Y. B. [1 ]
Wang, C. S. [1 ]
Du, H. L. [1 ]
Xiong, G. C. [1 ]
Lian, G. J. [1 ]
Yang, J. B. [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
D O I：
10.1063/1.4760221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We reported the resistance switching (RS) behavior in the epitaxially grown CeO2/La-0.7(Sr0.1Ca0.9)(0.3)MnO3 (CeO2/LSCMO) heterojunctions on SrTiO3 substrate. The CeO2/LSCMO device displayed improved switching characteristics as compared to that of metal/manganite device. The switching threshold voltage showed a strong dependence on the thickness of the CeO2 layer, where a minimum/maximum thickness was required for the appearance of the resistance switching. Both set and reset threshold voltages increase with the increase of the CeO2 layer thickness due to the trap-assisted electron tunneling effect. In the meantime, the defects or vacancies in the CeO2 films, in particular, the concentration of the defects or vacancies in the interface between CeO2 and LSCMO, have a significant impact on the switching effect. These results suggest that the electron tunneling accompanied by a trapping/detrapping process at the interface is likely responsible for the RS effect in the insulator/manganite system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4760221]
引用
收藏
页数：4
相关论文
共 30 条
[11]   Effect of oxygen vacancies in the SrTiO3 substrate on the electrical properties of the LaAlO3/SrTiO3 interface [J].
Kalabukhov, Alexey ;
Gunnarsson, Robert ;
Borjesson, Johan ;
Olsson, Eva ;
Claeson, Tord ;
Winkler, Dag .
PHYSICAL REVIEW B, 2007, 75 (12)
[12]   Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].
Kim, D. C. ;
Seo, S. ;
Ahn, S. E. ;
Suh, D. -S. ;
Lee, M. J. ;
Park, B. -H. ;
Yoo, I. K. ;
Baek, I. G. ;
Kim, H. -J. ;
Yim, E. K. ;
Lee, J. E. ;
Park, S. O. ;
Kim, H. S. ;
Chung, U-In ;
Moon, J. T. ;
Ryu, B. I. .
APPLIED PHYSICS LETTERS, 2006, 88 (20)
[13]   Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction [J].
Kim, Sungho ;
Jeong, Hu Young ;
Choi, Sung-Yool ;
Choi, Yang-Kyu .
APPLIED PHYSICS LETTERS, 2010, 97 (03)
[14]   Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices [J].
Lee, Seunghyup ;
Kim, Heejin ;
Yun, Dong-Jin ;
Rhee, Shi-Woo ;
Yong, Kijung .
APPLIED PHYSICS LETTERS, 2009, 95 (26)
[15]   Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching [J].
Liu, Z. Q. ;
Leusink, D. P. ;
Lu, W. M. ;
Wang, X. ;
Yang, X. P. ;
Gopinadhan, K. ;
Lin, Y. T. ;
Annadi, A. ;
Zhao, Y. L. ;
Barman, A. Roy ;
Dhar, S. ;
Feng, Y. P. ;
Su, H. B. ;
Xiong, G. ;
Venkatesan, T. ;
Ariando .
PHYSICAL REVIEW B, 2011, 84 (16)
[16]  
Meyer R, 2008, 2008 9TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, P54
[17]   Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices [J].
Muenstermann, Ruth ;
Menke, Tobias ;
Dittmann, Regina ;
Waser, Rainer .
ADVANCED MATERIALS, 2010, 22 (43) :4819-+
[18]   Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface [J].
Sawa, A ;
Fujii, T ;
Kawasaki, M ;
Tokura, Y .
APPLIED PHYSICS LETTERS, 2004, 85 (18) :4073-4075
[19]   Resistive switching in transition metal oxides [J].
Sawa, Akihito .
MATERIALS TODAY, 2008, 11 (06) :28-36
[20]   Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures [J].
Shang, D. S. ;
Wang, Q. ;
Chen, L. D. ;
Dong, R. ;
Li, X. M. ;
Zhang, W. Q. .
PHYSICAL REVIEW B, 2006, 73 (24)
123