,Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth

被引：77

作者：

Kumagai, Y ^{[1
]}

Yamane, T ^{[1
]}

Miyaji, T ^{[1
]}

Murakami, H ^{[1
]}

Kangawa, Y ^{[1
]}

Koukitu, A ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303360

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A thermodynamic analysis of the generation of gaseous aluminum chlorides by the reaction between aluminum (AI) metal and hydrogen chloride (HCl) gas is described for hydride vapor phase epitaxy (HVPE) of AlN. Regardless of the hydrogen mole fraction in the carrier gas, the major species of aluminum chloride is AlCl when the temperature of the Al metal is above 790 degreesC and is AlCl3 when the temperature is below 790 degreesC. Since AlCl3 is less reactive with quartz (SiO2) than AlCl, HVPE of AlN is possible using AlCl3 and NH3 even with a conventional system having a quartz reactor. Successful AlN HVPE on sapphire substrates is also reported. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2498 / 2501

页数：4

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