Characterization of MBE grown ZnO on GaAs(111) substrates

被引：6

作者：

Matsumoto, T ^{[1
]}

Nishimura, K ^{[1
]}

Nishii, A ^{[1
]}

Ota, A ^{[1
]}

Nabetani, Y ^{[1
]}

Kato, T ^{[1
]}

机构：

[1] Yamanashi Univ, Dept Elect & Elect Engn, Takeda 4, Kofu, Yamanashi 400, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssc.200564645

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO epitaxial layers grown on GaAs(111)B substrates by plasma assisted MBE with different O/Zn flux ratios are characterized by photoluminescence (PL), X-ray diffraction (XRD) theta-2 theta scan, omega scan, and reciprocal lattice mapping. Low temperature PL spectra are dominated by bound exciton bands at 3.360 eV and 3.330 eV. The 3.360 eV band is strong in samples grown under Zn-rich cindition and the 3.330 eV band is strong in samples grown under O-rich condition. The epitaxial orientation relationship is ZnO(0001)//GaAs(111) and ZnO[11-20]//GaAs [01-1] irrespective of the O/Zn flux ratio. The ZnO c-axis tilts by 0.2 degrees similar to 0.3 degrees firom the GaAs [111] axis toward < 1-10 > or < 2-1-1 > direction. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：984 / +

页数：2

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