Structural, Electrical, and Optical Properties of Na-Doped ZnO Thin Films Deposited by Pulsed Laser Deposition

被引：11

作者：

Shan, F. K. ^{[1
,2
,3
]}

Liu, G. X. ^{[1
,2
,3
]}

Lee, W. J. ^{[1
]}

Bae, K. R. ^{[1
]}

Shin, B. C. ^{[1
]}

Kim, H. S. ^{[4
]}

机构：

[1] Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South Korea

[2] QingDao Univ, Growing Base State Key Lab, Coll Phys Sci, Qingdao 266071, Peoples R China

[3] QingDao Univ, Lab New Fiber Mat & Modern Text, Growing Base State Key Lab, Qingdao 266071, Peoples R China

[4] Korea Maritime Univ, Dept Semicond Phys, Pusan 600545, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 10期

关键词：

Na-Doped ZnO; Thin Film; Structure; Optical Property; PL;

D O I：

10.1166/jnn.2008.1192

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Na-doped ZnO thin films were deposited on quartz substrates at various temperatures by using pulsed laser deposition technique. An X-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the thin films. A Hall effect measurement system was used to investigate the electrical properties of the thin films. A spectrophotometer was used to measure the transmittances of the thin films. The band gap energies of the thin films were calculated by linear fitting the sharp absorption edge for high-quality thin film. The band gap energies of the Na-doped ZnO thin films are nearly the same as the pure ZnO. A spectrometer was used to investigate the luminescent properties of the thin films. The thin film deposited at 200 degrees C had no near band edge emission and no deep-level emission. The NBE emission appeared and increased with increasing the growth temperature.

引用

页码：5203 / 5207

页数：5

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