Si/SiGe resonant interband tunnel diode with fr0 20.2 GHz and peak current density 218 kA/cm2 for K-band mixed-signal applications

被引：24

作者：

Chung, Sung-Yong ^{[1
]}

Yu, Ronghua

Jin, Niu

Park, Si-Young

Berger, Paul R.

Thompson, Phillip E.

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[3] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期

基金：

美国国家科学基金会;

关键词：

microwave diodes; microwave oscillators; negative resistance devices; resonant tunneling diodes; semiconductor epitaxial layers; silicon alloys;

D O I：

10.1109/LED.2006.873379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the room-ternperature high frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency f(r)o of 20.2 GHz with a peak current density of 218 kA/cm(2), a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3 x 10(-7) Omega (.) cm(2) extracted from RF measurements was achieved by Ni silicidation through a P delta-doped quantum well by rapid thermal sintering at 430 degrees C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.

引用

页码：364 / 367

页数：4

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