Nanoscale modification of optical properties in Ge-doped SiO2 glass by electron-beam irradiation

被引：36
|
作者：
Jiang, N
Qiu, JR
Gaeta, AL
Silcox, J
机构：
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 11期
关键词：
D O I：
10.1063/1.1454211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we demonstrate rapid decomposition in Ge-doped SiO2 glass under high-energy electron irradiation, and comment on possible mechanisms for the interaction of the electron-beam with the glass. Nanometer-scale modifications in Ge-doped SiO2 glasses can be obtained by the redistribution of Ge in the glasses as a result of patterned electron-beam writing. (C) 2002 American Institute of Physics.
引用
收藏
页码：2005 / 2007
页数：3
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