Nanoscale modification of optical properties in Ge-doped SiO2 glass by electron-beam irradiation

被引：36
|
作者：
Jiang, N
Qiu, JR
Gaeta, AL
Silcox, J
机构：
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 11期
关键词：
D O I：
10.1063/1.1454211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we demonstrate rapid decomposition in Ge-doped SiO2 glass under high-energy electron irradiation, and comment on possible mechanisms for the interaction of the electron-beam with the glass. Nanometer-scale modifications in Ge-doped SiO2 glasses can be obtained by the redistribution of Ge in the glasses as a result of patterned electron-beam writing. (C) 2002 American Institute of Physics.
引用
收藏
页码：2005 / 2007
页数：3
相关论文
共 50 条
  • [1] Stability of electron-beam poling in N or Ge-doped H:SiO2 films
    Liu, Q.
    Poumellec, B.
    Blum, R.
    Girard, G.
    Bouree, J. -E.
    Kudlinski, A.
    Martinelli, G.
    APPLIED PHYSICS LETTERS, 2006, 88 (24)
  • [2] Mechanism of electron trapping in Ge-doped SiO2 glass
    Uchino, T
    Takahashi, M
    Yoko, T
    APPLIED PHYSICS LETTERS, 2001, 79 (03) : 359 - 361
  • [3] Paramagnetic centres induced in Ge-doped SiO2 glass with UV irradiation
    Fujimaki, M
    Katoh, T
    Kasahara, T
    Miyazaki, N
    Ohki, Y
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (12) : 2589 - 2594
  • [4] Electron-beam poling in undoped, N- or Ge-doped MDECR H:SiO2 films
    Liu, Q
    Poumellec, B
    Haut, C
    Dragoe, D
    Blum, R
    Girard, G
    Bourée, JE
    Kudlinski, A
    Quiquempois, Y
    Blaise, G
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (06): : 1213 - 1219
  • [5] Electron-beam poling in undoped, N- or Ge-doped MDECR H:SiO2 films
    Q. Liu
    B. Poumellec
    C. Haut
    D. Dragoe
    R. Blum
    G. Girard
    J.-E. Bourée
    A. Kudlinski
    Y. Quiquempois
    G. Blaise
    Applied Physics A, 2005, 81 : 1213 - 1219
  • [6] E′ center in ge-doped SiO2 glass
    Tamura, T
    Lu, GH
    Kohyama, M
    Yamamoto, R
    PHYSICAL REVIEW B, 2004, 70 (15) : 153201 - 1
  • [7] Electron beam poling in amorphous Ge-doped H:SiO2 films
    Liu, Q.
    Poumellec, B.
    Zhao, X.
    Girard, G.
    Bouree, J. . E.
    Kudlinski, A.
    Martinelli, G.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (2-9) : 472 - 475
  • [8] Modification of electronical and optical properties in SiO2 films by electron beam irradiation
    Fitting, HJ
    von Czarnowski, A
    Trukhin, AN
    Goldberg, M
    Barfels, T
    SOLID STATE PHENOMENA, 1998, 63-4 : 333 - 340
  • [9] Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass
    Ohama, M
    Fujiwara, T
    Ikushima, AJ
    APPLIED PHYSICS LETTERS, 1998, 73 (11) : 1481 - 1483
  • [10] Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass
    Toyota Technological Inst, Nagoya, Japan
    Appl Phys Lett, 11 (1481-1483):
12345