共 26 条
[2]
CAPAZ RB, 1995, PHYS REV B, V51, P17775
[4]
DEFELICE R, 1996, PHYS REV B, V54
[5]
DIFELICE R, UNPUB
[7]
High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2x2) and (4x4) reflection high energy electron diffraction patterns
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1996, 35 (3A)
:L289-L292
[8]
Molecular beam epitaxy growth and properties of GaN, AlxGa1-xN, and AlN on GaN/SiC substrates
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (03)
:2349-2353
[10]
Kubaschewski O., 1979, METALLURGICAL THERMO