Effect of argon plasma etching damage on electrical characteristics of gallium nitride

被引：23

作者：

Kawakami, Retsuo ^{[1
]}

Inaoka, Takeshi ^{[1
]}

机构：

[1] Univ Tokushima, Fac Engn, Tokushima 7708506, Japan

来源：

VACUUM | 2008年 / 83卷 / 03期

关键词：

Argon plasma etching damage; n-GaN; Schottky contact; Physical etching; UV radiation;

D O I：

10.1016/j.vacuum.2008.04.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of Ar plasma etching damage on electrical characteristics of n-GaN is significantly dependent on gas pressure. At a low gas pressure (5 mTorr), physical etching effect contributes to degradation of a reverse leakage current through a Au/n-GaN Schottky contact. At a high gas pressure (50 or 100 mTorr), UV radiation effect from the Ar plasma (ArII whose energy corresponds to GaN band-gap energy) seems to contribute to the degradation. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：490 / 492

页数：3

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