Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

被引：13

作者：

Hou, Ying ^{[1
]}

Lu, Zhaoyue ^{[1
]}

Pu, Tiansong ^{[1
]}

Zhang, Yuan ^{[1
]}

Xu, Guoqiang ^{[2
]}

Xu, Haisheng ^{[1
]}

机构：

[1] E China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China

[2] Kunshan Hisense Elect Co Ltd, Kunshan 215300, Jiangsu, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期

基金：

中国国家自然科学基金;

关键词：

THICKNESS;

D O I：

10.1063/1.4792689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792689]

引用

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