Effect of rapid thermal annealing on the properties of spin-coated In-Zn-Sn-O films

被引:13
作者
Jin, Chenhao [1 ]
You, In-Kyu [2 ]
Kim, Han-Ki [1 ]
机构
[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, Gyeonggi Do, South Korea
[2] Elect & Telecommun Res Inst, Green Devices & Mat Res Lab, Energy Applicat Technol Res Team, Taejon 305606, South Korea
关键词
Rapid thermal annealing; In-Zn-Sn-O; Spin-coating; Transparent electrodes; TRANSPARENT; ELECTRODES;
D O I
10.1016/j.cap.2012.12.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the effect of rapid thermal annealing (RTA) on the electrical, optical and structural properties of In-Zn-Sn-O (IZTO) films prepared by spin-coating process using IZTO nanoink. By using conventional spin-coating process using IZTO nanoink, we could coat the IZTO film on a glass substrate under atmospheric ambient. At optimized RTA temperature of 700 degrees C and working pressure of 100 Torr under pure nitrogen ambient, we were able to obtain a spin-coated IZTO films with a sheet resistance of 45 Omega/square and transmittance of 81.62% at 550 nm wavelength. This indicates that the IZTO film prepared by simple spin-coating printing is a visible alternative to high cost sputtered-IZTO films and possibility of solution-based transparent electrode for cost-efficient solution based optoelectronic devices. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:S177 / S181
页数:5
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