p-type conduction in nitrogen-doped ZnS nanoribbons

被引：37

作者：

Yuan, G. D. ^{[1
,2
]}

Zhang, W. J. ^{[1
,2
]}

Zhang, W. F. ^{[1
,2
]}

Fan, X. ^{[1
,2
,3
]}

Bello, I. ^{[1
,2
]}

Lee, C. S. ^{[1
,2
]}

Lee, S. T. ^{[1
,2
]}

机构：

[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期

关键词：

annealing; electrical conductivity; field effect transistors; II-VI semiconductors; nanostructured materials; nitrogen; semiconductor doping; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3025846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p-type behavior of ZnS NRs and significant enhancement in p-type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p-type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of N-S-H bonding.

引用

页数：3

共 20 条

[11] Optical constants of wurtzite ZnS thin films determined by spectroscopic ellipsometry [J].