p-type conduction in nitrogen-doped ZnS nanoribbons

被引：37
作者：
Yuan, G. D. [1 ,2 ]
Zhang, W. J. [1 ,2 ]
Zhang, W. F. [1 ,2 ]
Fan, X. [1 ,2 ,3 ]
Bello, I. [1 ,2 ]
Lee, C. S. [1 ,2 ]
Lee, S. T. [1 ,2 ]
机构：
[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[3] Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期
关键词：
annealing; electrical conductivity; field effect transistors; II-VI semiconductors; nanostructured materials; nitrogen; semiconductor doping; wide band gap semiconductors; zinc compounds;
D O I：
10.1063/1.3025846
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p-type behavior of ZnS NRs and significant enhancement in p-type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p-type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of N-S-H bonding.
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