Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

被引：12

作者：

Kim, Yeongho ^{[1
]}

Ban, Keun-Yong ^{[1
]}

Zhang, Chaomin ^{[1
]}

Honsberg, Christiana B. ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 15期

基金：

美国国家科学基金会;

关键词：

MATRIX; GROWTH;

D O I：

10.1063/1.4933272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and 20%. All QDSCs exhibit an extended external quantum efficiency (EQE) response in the wavelength range of 960-1000 nm that corresponds to sub-bandgap photon absorption. As Sb content increases from 5% to 20%, the cutoff wavelength in the EQE extends towards longer wavelength whilst the EQE in the wavelength region of 300-880 nm is lowered due to increased defect density. Compared to the QDSC (Sb 0%), an Sb incorporation of 5% enhances the short-circuit current density from 20.65 to 22.15 mA/cm(2) induced by Sb surfactant effect. Since the open-circuit voltage and fill factor of the QDSC (Sb 5%) are comparable to those of the QDSC (Sb 0%), an enhancement in solar cell efficiency (10.5%) of the QDSC (Sb 5%) is observed. Further increasing Sb content to 15% and 20% results in the degradation of solar cell performance due to increased nonradiative recombination and large valence band offset in a type-II band line-up. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 29 条

[1] Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell [J].

Antolin, E. ;

Marti, A. ;

Farmer, C. D. ;

Linares, P. G. ;

Hernandez, E. ;

Sanchez, A. M. ;

Ben, T. ;

Molina, S. I. ;

Stanley, C. R. ;

Luque, A. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)

[2] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION [J].

AYERS, JE .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :71-77

[3] Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence [J].

Ban, Keun-Yong ;

Kuciauskas, Darius ;

Bremner, Stephen P. ;

Honsberg, Christiana B. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)

[4] Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots [J].

Ban, Keun-Yong ;

Bremner, Stephen P. ;

Liu, Guangming ;

Dahal, Som N. ;

Dippo, Patricia C. ;

Norman, Andrew G. ;

Honsberg, Christiana B. .

APPLIED PHYSICS LETTERS, 2010, 96 (18)

[5] INAS QUANTUM DOTS IN A SINGLE-CRYSTAL GAAS MATRIX [J].

BRANDT, O ;

TAPFER, L ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M ;

PHILLIPP, F ;

LAGE, H ;

HEBERLE, A .

PHYSICAL REVIEW B, 1991, 44 (15) :8043-8053

[6] Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001) [J].

Bremner, S. P. ;

Ban, K-Y ;

Faleev, N. N. ;

Honsberg, C. B. ;

Smith, D. J. .

JOURNAL OF APPLIED PHYSICS, 2013, 114 (10)

[7] Identification of candidate material systems for quantum dot solar cells including the effect of strain [J].

Dahal, Som N. ;

Bremner, Stephen P. ;

Honsberg, Christiana B. .

PROGRESS IN PHOTOVOLTAICS, 2010, 18 (04) :233-239

[8] InAs/GaAsSb quantum dot solar cells [J].

Hatch, Sabina ;

Wu, Jiang ;

Sablon, Kimberly ;

Phu Lam ;

Tang, Mingchu ;

Jiang, Qi ;

Liu, Huiyun .

OPTICS EXPRESS, 2014, 22 (09) :A679-A685

[9] Effect of strain compensation on quantum dot enhanced GaAs solar cells [J].

Hubbard, S. M. ;

Cress, C. D. ;

Bailey, C. G. ;

Raffaelle, R. P. ;

Bailey, S. G. ;

Wilt, D. M. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

[10] MICROSTRUCTURAL EVOLUTION DURING THE HETEROEPITAXY OF GE ON VICINAL SI(100) [J].

KRISHNAMURTHY, M ;

DRUCKER, JS ;

VENABLES, JA .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6461-6471

← 1 2 3 →