An Integrated Millimeter-Wave Broadband Microstrip-to-Waveguide Vertical Transition Suitable for Multilayer Planar Circuits

被引：25

作者：

Dai, Xinfeng ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Dept Microwave & Millimeter Wave Modules, Nanjing 210016, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 11期

关键词：

Microstrip-to-waveguide vertical transition; millimeter-wave; multilayer; substrate integrated waveguide (SIW); SUBSTRATE;

D O I：

10.1109/LMWC.2016.2614973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated broadband vertical microstrip-to-rectangular waveguide (RWG) transition at Ka-band is presented. This transition is especially suitable for multilayer planar circuits, by utilizing a section of multilayer three-dimensional (3-D) stepped substrate integrated waveguide (SIW) structure, along with a taper transition. A simplified initial transition model from 3-D stepped SIW to waveguide is first optimized, thereafter, a full microstrip-to-waveguide transition is constructed and further optimized. For demonstration, some back-to-back transition prototypes are fabricated by multilayer PCB processing. The experimental results show that the return loss better than 15 dB is obtained from 33 to 36.7 GHz, with the minimum net insertion loss about 0.7 dB for a single transition at 35 GHz.

引用

页码：900 / 902

页数：3

共 9 条

[1] Gap-coupled patch-type waveguide-to-microstrip transition on single-layer dielectric substrate at V-band [J].