Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

被引：22

作者：

He, Shaojian ^{[1
]}

Li, Shusheng ^{[1
]}

Wang, Fuzhi ^{[1
]}

Wang, Andrew Y. ^{[2
]}

Lin, Jun ^{[1
]}

Tan, Zhan'ao ^{[1
]}

机构：

[1] North China Elect Power Univ, Sch Renewable Energy, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China

[2] Ocean NanoTech LLC, Springdale, AR 72764 USA

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 17期

基金：

中国国家自然科学基金;

关键词：

INDIUM-TIN-OXIDE; POLYMER SOLAR-CELLS; SEMICONDUCTING POLYMER; NICKEL-OXIDE; WHITE-LIGHT; NANOCRYSTALS; DEVICES; ELECTROLUMINESCENCE; PERFORMANCE; METAL;

D O I：

10.1088/0957-4484/24/17/175201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide. (MoOx) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoOx as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoOx anode buffer layer. The QD-LEDs with a MoOx anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m(-2) and 0.67 cd A(-1) for the yellow emission at 580 nm, and 7842 cd m(-2) and 1.49 cd A(-1) for the red emission at 610 nm, respectively.

引用

页数：7

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