We present a new framework to quantify the effect of hydrogen on dislocations using large scale three-dimensional (3D) discrete dislocation dynamics (DDD) simulations. In this model, the first order elastic interaction energy associated with the hydrogen-induced volume change is accounted for. The three-dimensional stress tensor induced by hydrogen concentration, which is in equilibrium with respect to the dislocation stress field, is derived using the Eshelby inclusion model, while the hydrogen bulk diffusion is treated as a continuum process. This newly developed framework is utilized to quantify the effect of different hydrogen concentrations on the dynamics of a glide dislocation in the absence of an applied stress field as well as on the spacing between dislocations in an array of parallel edge dislocations. A shielding effect is observed for materials having a large hydrogen diffusion coefficient, with the shield effect leading to the homogenization of the shrinkage process leading to the glide loop maintaining its circular shape, as well as resulting in a decrease in dislocation separation distances in the array of parallel edge dislocations. On the other hand, for materials having a small hydrogen diffusion coefficient, the high hydrogen concentrations around the edge characters of the dislocations act to pin them. Higher stresses are required to be able to unpin the dislocations from the hydrogen clouds surrounding them. Finally, this new framework can open the door for further large scale studies on the effect of hydrogen on the different aspects of dislocation-mediated plasticity in metals. With minor modifications of the current formulations, the framework can also be extended to account for general inclusion-induced stress field in discrete dislocation dynamics simulations. (C) 2018 Elsevier Ltd. All rights reserved.
机构:
Univ Savoie, Lab Syst & Mat Mecatron, F-74944 Annecy Le Vieux, France
Indira Gandhi Ctr Atom Res, Mech Met Div, Kalpakkam 603102, Tamil Nadu, IndiaUniv Savoie, Lab Syst & Mat Mecatron, F-74944 Annecy Le Vieux, France
Reddy, G. V. Prasad
Robertson, C.
论文数: 0引用数: 0
h-index: 0
机构:
CEA, DEN, Serv Rech Met Appl, F-91191 Gif Sur Yvette, FranceUniv Savoie, Lab Syst & Mat Mecatron, F-74944 Annecy Le Vieux, France
Robertson, C.
Depres, C.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Savoie, Lab Syst & Mat Mecatron, F-74944 Annecy Le Vieux, FranceUniv Savoie, Lab Syst & Mat Mecatron, F-74944 Annecy Le Vieux, France
Depres, C.
Fivel, M.
论文数: 0引用数: 0
h-index: 0
机构:
CNRS UJF, Grenoble INP, SIMaP GPM2, F-38402 St Martin Dheres, FranceUniv Savoie, Lab Syst & Mat Mecatron, F-74944 Annecy Le Vieux, France
机构:
CEA Saclay, SRMP, F-91191 Gif Sur Yvette, FranceCEA Saclay, SRMP, F-91191 Gif Sur Yvette, France
Mordehai, Dan
Clouet, Emmanuel
论文数: 0引用数: 0
h-index: 0
机构:
CEA Saclay, SRMP, F-91191 Gif Sur Yvette, France
Univ Lille 1, LMPGM, F-59655 Villeneuve Dascq, FranceCEA Saclay, SRMP, F-91191 Gif Sur Yvette, France
Clouet, Emmanuel
Fivel, Marc
论文数: 0引用数: 0
h-index: 0
机构:
CNRS UJF, Grenoble INP, SIMaP, F-38402 St Martin Dheres, FranceCEA Saclay, SRMP, F-91191 Gif Sur Yvette, France