Room-Temperature Polariton Lasing from GaN Nanowire Array Clad by Dielectric Microcavity

被引：51

作者：

Heo, Junseok ^{[1
]}

Jahangir, Shafat ^{[1
]}

Xiao, Bo ^{[1
]}

Bhattacharya, Pallab ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Photon & Multiscale Nanomat, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 06期

基金：

美国国家科学基金会;

关键词：

Nanowires; exciton-polariton; microcavity; lasing; CATALYST-FREE; CONDENSATION; LIGHT;

D O I：

10.1021/nl400060j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Room-temperature polariton lasing from a GaN-dielectric rnicrocavity is demonstrated with optical excitation. The device is fabricated with a GaN nanowire array clad by Si3N4/SiO2-distributed Bragg reflectors. The nanowire array is initially grown on silicon substrate by molecular beam epitaxy. A distinct nonlinearity in the lower polariton emission is observed at a threshold optical energy density of 625 nJ/cm(2), accompanied by significant line width narrowing to 5 meV and a small blue shift of similar to 1 meV. The measured polariton dispersion is characterized by a Rabi splitting of 40 meV and a cavity exciton detuning of -17 meV. The device described here is a demonstration of exciton-photon strong coupling phenomenon in an array of light emitters and paves the way for the realization of a room temperature electrically injected polariton laser.

引用

页码：2376 / 2380

页数：5

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