The Ho2CoZrO6 (HCZ) double perovskite has been prepared in polycrystalline form by solid state reaction technique. The analysis of the X-ray powder diffraction pattern indicates that the crystal structure is monoclinic at room temperature with cell parameters a = 8.1858 +/- 0.0023 angstrom, b = 5.2599 +/- 0.0027 angstrom, c = 7.9874 +/- 0.0031 angstrom and beta = 108.51 +/- 0.021 degrees. The compound shows significant frequency dispersion in its dielectric properties. The Cole-Cole model is used to determine the polydispersive nature of dielectric relaxation. The scaling behaviour of dielectric loss and imaginary electric modulus suggest that the relaxation describe same mechanism at various temperatures. Impedance data presented in the Nyquist plot (Z" versus Z') are used to identify an equivalent circuit and to know the bulk and interface contributions. The complex impedance analysis of HCZ exhibits the appearance of both the grain and the grain-boundary contribution. The frequency dependent conductivity spectra follow the universal power law. The magnitude of the activation energy indicates that the carrier transport is due to the hopping conduction. (C) 2012 Elsevier Ltd. All rights reserved.
机构:
Imam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, POB 1982, Dammam 31441, Saudi Arabia
Imam Abdulrahman Bin Faisal Univ, Dept Phys, Coll Sci, POB 1982, Dammam 31441, Saudi ArabiaImam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, POB 1982, Dammam 31441, Saudi Arabia
Ghrib, Taher
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME,
2022,
144
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Univ Teknol MARA, Fac Appl Sci, Sch Chem, Shah Alam 40450, Selangor, MalaysiaUniv Teknol MARA, Fac Appl Sci, Sch Chem, Shah Alam 40450, Selangor, Malaysia
Aziz, Nor Diyana Abdul
Kamarulzaman, Alyea Sofea
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Univ Teknol MARA, Fac Appl Sci, Sch Phys, Shah Alam 40450, Selangor, MalaysiaUniv Teknol MARA, Fac Appl Sci, Sch Chem, Shah Alam 40450, Selangor, Malaysia
Kamarulzaman, Alyea Sofea
Ibrahim, Norazila
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Univ Teknol MARA, Fac Appl Sci, Sch Phys, Shah Alam 40450, Selangor, MalaysiaUniv Teknol MARA, Fac Appl Sci, Sch Chem, Shah Alam 40450, Selangor, Malaysia
Ibrahim, Norazila
Mohamed, Zakiah
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Univ Teknol MARA, Fac Appl Sci, Sch Phys, Shah Alam 40450, Selangor, MalaysiaUniv Teknol MARA, Fac Appl Sci, Sch Chem, Shah Alam 40450, Selangor, Malaysia
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Siksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, IndiaSiksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India
Mishra, Subhashree
Sahoo, Shubhashree
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Siksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, IndiaSiksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India
Sahoo, Shubhashree
Kumar, Navin
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CSIR Inst Minerals & Mat Technol, Dept Adv Mat Technol, Bhubaneswar 751013, IndiaSiksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India
Kumar, Navin
Panigrahi, Ajit
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CSIR Inst Minerals & Mat Technol, Dept Adv Mat Technol, Bhubaneswar 751013, IndiaSiksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India
Panigrahi, Ajit
Parida, B. N.
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Govt India, MoE, Cent Inst Technol Kokrajhar, Dept Phys, Btr 783370, Assam, IndiaSiksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India
Parida, B. N.
Parida, R. K.
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Siksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, IndiaSiksha O Anusandhan, Fac Engn & Technol, Dept Phys, Bhubaneswar 751030, India