Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN

被引：67

作者：

Markurt, T. ^{[1
]}

Lymperakis, L. ^{[2
]}

Neugebauer, J. ^{[2
]}

Drechsel, P. ^{[3
]}

Stauss, P. ^{[3
]}

Schulz, T. ^{[1
]}

Remmele, T. ^{[1
]}

Grillo, V. ^{[4
,5
]}

Rotunno, E. ^{[5
]}

Albrecht, M. ^{[1
]}

机构：

[1] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[2] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany

[3] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

[4] Natl Res Ctr S3 CNR INFM, I-41125 Modena, Italy

[5] Natl Res Ctr IMEM CNR, I-43124 Parma, Italy

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 03期

关键词：

THREADING DISLOCATIONS; ANTI-SURFACTANT; IN-SITU; EPITAXY; REDUCTION; SILICON; MOVPE; ANNIHILATION; QUALITY;

D O I：

10.1103/PhysRevLett.110.036103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Combining aberration corrected high resolution transmission electron microscopy and density functional theory calculations we propose an explanation of the antisurfactant effect of Si in GaN growth. We identify the atomic structure of a Si delta-doped layer (commonly called SiNx mask) as a SiGaN3 monolayer that resembles a root 3 x root 3 R30 degrees surface reconstruction containing one Si atom, one Ga atom, and a Ga vacancy (V-Ga) in its unit cell. Our density functional theory calculations show that GaN growth on top of this SiGaN3 layer is inhibited by forming an energetically unfavorable electrical dipole moment that increases with layer thickness and that is caused by charge transfer between cation dangling bonds at the surface to V-Ga bound at subsurface sites. DOI: 10.1103/PhysRevLett.110.036103

引用

页数：5

共 33 条

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