Effects of Etch Rate on Plasma-Induced Damage to Porous Low-k Films

被引：24

作者：

Iba, Yoshihisa ^{[1
]}

Kirimura, Tomoyuki ^{[1
]}

Sasaki, Mokoto ^{[2
]}

Kobayashi, Yasushi ^{[2
]}

Nakata, Yoshirio ^{[2
]}

Nakaishi, Masafumi ^{[1
]}

机构：

[1] Fujitsu Ltd, Akiruno Technol Ctr, Tokyo 1970833, Japan

[2] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

关键词：

porous; low-k; plasma; etch rate; damage;

D O I：

10.1143/JJAP.47.6923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of etch rate on low-k damage induced by dry etching under CF4, CF4/O-2, and C4F6/O-2/Ar chetnistry conditions. The amount of damage increases with decreasing etch rate in all chemistries. This is because the amount of fluorine or oxygen radical diffusion increases with plasma exposure time. These radicals extract CH3 groups from the low-k film or oxidize the film. To reduce damage to the lowest level possible, it is necessary to suppress the effect of the damage diffusion using etching conditions where the etching speed is higher than the diffusion speed of the damage.

引用

页码：6923 / 6930

页数：8

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