Capacitance of metallic and semiconducting nanowires examined by first-principles calculations

被引:4
|
作者
Chan, Tzu-Liang [1 ]
机构
[1] Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 24期
关键词
PERIODIC BOUNDARY-CONDITIONS; SILICON NANOWIRES; ELECTRON-GAS; TOTAL-ENERGY; DEFECTS; SYSTEMS; PSEUDOPOTENTIALS; BATTERIES;
D O I
10.1103/PhysRevB.86.245414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The capacitance of Al < 110 > and P-doped Si < 110 > nanowires a few nanometers in diameter are examined by first-principles calculations. During charging, the metallic nanowire expels the charge to its surface, and its capacitance stays relatively constant. For the semiconducting nanowire, depletion of conduction electrons can lead to an increase in the work function, which results in a drop in the capacitance when charged beyond a threshold. This study is made possible by developing a formalism for total energy calculations of charged periodic systems with a specific electrostatic boundary condition. DOI: 10.1103/PhysRevB.86.245414
引用
收藏
页数:6
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