Improved conductivity of Sb-doped SnO2 thin films

被引：44

作者：

Alsac, A. A. ^{[1
]}

Yildiz, A. ^{[2
]}

Serin, T. ^{[1
]}

Serin, N. ^{[1
]}

机构：

[1] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey

[2] Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Energy Syst Engn, Ankara, Turkey

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 06期

关键词：

ELECTRON-ELECTRON INTERACTIONS; DISORDERED METALS; POLYCRYSTALLINE; SEMICONDUCTORS; LOCALIZATION; SILICON;

D O I：

10.1063/1.4790879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sb-doped SnO2 thin films at different thickness have been grown by sol-gel dip-coating method. All of the films exhibit degenerate semiconductor behavior and high free carrier concentrations. In the films, electrical transport can be explained reasonably well by assuming the electron-electron interactions (EEIs) contribution to the measured electrical conductivity. Our experimental observations are consistent with the theoretical description of the EEI. The effect of films thickness on the EEI contribution is also discussed. When the thickness of film reaches to 1550 nm, the agreement between the EEI theory and experimental data becomes unsatisfactory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790879]

引用

页数：4

共 27 条

[1] FERMI-LIQUID THEORY OF THE ELECTRON-ELECTRON INTERACTION EFFECTS IN DISORDERED METALS [J].

ALTSHULER, BL ;

ARONOV, AG .

SOLID STATE COMMUNICATIONS, 1983, 46 (06) :429-435

[2]

Cullity B. D., 1978, ELEMENTS XRAY DIFFRA

[3] Optochemical sensor for water monitoring based on SnO2 particle layer deposited onto optical fibers by the electrospray pyrolysis method [J].

Cusano, A. ;

Consales, M. ;

Pisco, M. ;

Pilla, P. ;

Cutolo, A. ;

Buosciolo, A. ;

Viter, R. ;

Smyntyna, V. ;

Giordano, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[4] Effect of humidity and thermal curing of polymer gate dielectrics on the electrical hysteresis of SnO2 nanowire field effect transistors [J].

Hong, Sahngki ;

Kim, Daeil ;

Kim, Gyu-Tae ;

Ha, Jeong Sook .

APPLIED PHYSICS LETTERS, 2011, 98 (10)

[5] INELASTIC-SCATTERING TIME IN DISORDERED METALS [J].

ISAWA, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1984, 53 (09) :2865-2867

[6] THE SMALLEST LENGTH SCALE NEAR THE METAL-INSULATOR-TRANSITION [J].

KAVEH, M ;

NEWSON, DJ ;

BENZIMRA, D ;

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (03) :L19-L24

[7] DIFFUSION AND LOGARITHMIC CORRECTIONS TO THE CONDUCTIVITY OF A DISORDERED NON-INTERACTING 2D ELECTRON-GAS - POWER LAW LOCALIZATION [J].

KAVEH, M ;

MOTT, NF .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (08) :L177-L182

[8] DISORDERED ELECTRONIC SYSTEMS [J].

LEE, PA ;

RAMAKRISHNAN, TV .

REVIEWS OF MODERN PHYSICS, 1985, 57 (02) :287-337

[9] Morphological and sensing properties of spray-pyrolysed Th:SnO2 thin films [J].

Niranjan, RS ;

Patil, KR ;

Sainkar, SR ;

Vijayamohanan, K ;

Mulla, IS .

MATERIALS CHEMISTRY AND PHYSICS, 2004, 84 (01) :37-45

[10] Metal-semiconductor transition in epitaxial ZnO thin films [J].

Nistor, M. ;

Gherendi, F. ;

Mandache, N. B. ;

Hebert, C. ;

Perriere, J. ;

Seiler, W. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)

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