Tunable electric properties of PbZrO3 films related to the coexistence of ferroelectricity and antiferroelectricity at room temperature

被引:26
|
作者
Liu, Yaoyang [1 ]
Lu, Xiaomei [1 ]
Jin, Yaming [1 ]
Peng, Song [1 ]
Huang, Fengzhen [1 ]
Kan, Yi [1 ]
Xu, Tingting [1 ]
Min, Kangli [1 ]
Zhu, Jinsong [1 ]
机构
[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
美国国家科学基金会;
关键词
TITANATE THIN-FILMS; PHASE-TRANSITIONS; HIGH TUNABILITY; CERAMICS; COEFFICIENT; CRYSTAL; SRTIO3;
D O I
10.1063/1.4720146
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polycrystalline PbZrO3 films with a preferred orientation were fabricated via the metal-organic decomposition method. For heat-treated PbZrO3 films, the P-E hysteresis loops, dielectric spectra, and I-V curves show interesting changes with time, which strongly suggest the coexistence of antiferroelectric and ferroelectric phases at room temperature. Based on the easy transition between these two phases, the electric properties of the films become tunable. A dielectric tunability of about 50.2% below 8.2V makes it a promising low working-voltage dielectric tunable material, and the significant current change of four orders of magnitude indicates potential application as a voltage-controlled rheostat. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4720146]
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin films
    Coulibaly, Mamadou D.
    Borderon, Caroline
    Renoud, Raphael
    Gundel, Hartmut W.
    APPLIED PHYSICS LETTERS, 2020, 117 (14)
  • [22] Dielectric properties of La-modified antiferroelectric PbZrO3 thin films
    Bharadwaja, SSN
    Saha, S
    Bhattacharyya, S
    Krupanidhi, SB
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (01): : 22 - 25
  • [23] Phase Coexistence Induced Giant Dielectric Tunability and Electromechanical Response in PbZrO3 Epitaxial Thin Films
    Zhang, Wanli
    Mou, Xinpeng
    Ma, Yunpeng
    Zheng, Yi
    Wang, Sixu
    Shu, Liang
    Du, Ziwan
    Deng, Chenguang
    Yang, Qiong
    Yu, Rong
    Li, Jing-Feng
    Li, Qian
    SMALL, 2025, 21 (09)
  • [24] Finite-temperature properties of antiferroelectric PbZrO3 from atomistic simulations
    Mani, B. K.
    Lisenkov, S.
    Ponomareva, I.
    PHYSICAL REVIEW B, 2015, 91 (13)
  • [25] PRESSURE AND TEMPERATURE DEPENDENCE OF DIELECTRIC PROPERTIES AND PHASE TRANSITION IN ANTIFERROELECTRIC PBZRO3
    SAMARA, GA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 336 - &
  • [26] Enhanced energy storage properties in PbZrO3 thin films via the incorporation of NiO
    Wang, X. W.
    Chen, J. Y.
    Hu, S. Y.
    Yu, K. X.
    Yang, F.
    Shi, Y. J.
    Li, J. H.
    Hou, M. Z.
    Liu, A. D.
    Zheng, M. M.
    Yin, S. Q.
    Hu, Y. C.
    Shang, J.
    CURRENT APPLIED PHYSICS, 2023, 52 : 24 - 30
  • [27] Enhanced energy storage properties and temperature stability of fatigue-free La-modified PbZrO3 films under low electric fields
    Qiao, Xiaojun
    Geng, Wenping
    Chen, Xi
    Zhang, Le
    Zheng, Dongwan
    Zhang, Liaoyuan
    He, Jian
    Hou, Xiaojuan
    Yang, Yun
    Cui, Min
    Zeng, Kaiyang
    Chou, Xiujian
    SCIENCE CHINA-MATERIALS, 2020, 63 (11) : 2325 - 2334
  • [28] Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium
    Hao, Xihong
    Zhai, Jiwei
    Zhou, Jing
    Yue, Zhenxing
    Yang, Jichun
    Zhao, Wenguang
    An, Shengli
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (02) : 271 - 275
  • [29] Effects of Nb and Mg doping on the dielectric and electromechanical properties of PbZrO3 thin films
    Yao, Yulian
    Gallego, Melissa
    Bassiri-Gharb, Nazanin
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2021, 41 (06) : 3363 - 3368
  • [30] Dielectric properties of PbZrxTi1-xO3/PbZrO3 multilayer thin films
    Bae, SH
    Jeon, KB
    Jin, BM
    MATERIALS RESEARCH BULLETIN, 2001, 36 (11) : 1931 - 1937